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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
D882
TRANSISTORNPN (c)
TO 126
FEATURES Power dissipation PCM : 1.25 W Tamb=25ae(c) Collector current ICM : 3 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(c) 1 DC current gain hFE(c) 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=2V, IC= 100mA IC=2A, IB= 0.2A IC=2A, IB= 0.2A VCE=5 V, I =0.1mA C Transition frequency
1. EMITTER 2.COLLECTOR 3.BASE
123
unless
Test
otherwise
MIN
specified(c)
TYP MAX UNIT V V V 1 10 1 |I A |I A |I A
conditions
Ic=100|I =0 A IE IC= 10 mA , IB=0 IE= 100 |I IC=0 A VCB=40 V , IE=0 VCE=30 V , IB=0 VEB=6V , IC=0
40 30 6
VCE= 2V, IC= 1A
60 32
400
0.5 1.5
V V
f
T
50
MHz
f = 10MHz CLASSIFICATION OF hFE(1)
Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400
TO-126 PACKAGE OUTLINE DIMENSIONS
D
A1
A
E
b1 L
e e1
L1 b C Dimensions In Millimeters Min 2.500 1.100 0.660 1.170 0.450 7.400 10.600 2.290TYP 4.480 15.300 2.100 3.900 3.000 4.680 15.700 2.300 4.100 3.200 0.176 0.602 0.083 0.154 0.118 Max 2.900 1.500 0.860 1.370 0.600 7.800 11.000 Min 0.098 0.043 0.026 0.046 0.018 0.291 0.417 0.090TYP 0.184 0.618 0.091 0.161 0.126
P
|O
Symbol A A1 b b1 c D E e e1 L L1 P |O
Dimensions In Inches Max 0.114 0.059 0.034 0.054 0.024 0.307 0.433

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